JPH0274587U - - Google Patents
Info
- Publication number
- JPH0274587U JPH0274587U JP15382688U JP15382688U JPH0274587U JP H0274587 U JPH0274587 U JP H0274587U JP 15382688 U JP15382688 U JP 15382688U JP 15382688 U JP15382688 U JP 15382688U JP H0274587 U JPH0274587 U JP H0274587U
- Authority
- JP
- Japan
- Prior art keywords
- eccentric
- eccentric portion
- maximum
- outer peripheral
- rotary compressor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims 4
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15382688U JPH078865Y2 (ja) | 1988-11-25 | 1988-11-25 | ロータリー圧縮機 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15382688U JPH078865Y2 (ja) | 1988-11-25 | 1988-11-25 | ロータリー圧縮機 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0274587U true JPH0274587U (en]) | 1990-06-07 |
| JPH078865Y2 JPH078865Y2 (ja) | 1995-03-06 |
Family
ID=31430009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15382688U Expired - Lifetime JPH078865Y2 (ja) | 1988-11-25 | 1988-11-25 | ロータリー圧縮機 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH078865Y2 (en]) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7538473B2 (en) | 2004-02-03 | 2009-05-26 | S.C. Johnson & Son, Inc. | Drive circuits and methods for ultrasonic piezoelectric actuators |
| KR101878670B1 (ko) * | 2012-01-06 | 2018-07-16 | 엘지전자 주식회사 | 로터리 압축기 |
-
1988
- 1988-11-25 JP JP15382688U patent/JPH078865Y2/ja not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH078865Y2 (ja) | 1995-03-06 |